I-12V 600A 7.2KW Monocrystalline Silicon Rectifier ye-Chrome Nickel Zinc Electroplating
isici
Imodeli Nedatha
| Inombolo yemodeli | I-ripple yokukhipha | Ukunemba kwesibonisi samanje | Ukunemba kokubonisa kwe-volt | Ukunemba kwe-CC/CV | Khuphuka bese wehla | Ukudubula ngokweqile |
| I-GKD12-600CVC | I-VPP≤0.5% | ≤10mA | ≤10mV | ≤10mA/10mV | 0~99S | No |
Izinhlelo Zokusebenza Zomkhiqizo
Ugesi wokushisa we-silicon furnace one-monocrystalline uwumthombo wamandla we-DC onamandla aphezulu, amandla angasetshenziswa ngqo ekufudumaleni kwe-graphite heater ku-monocrystalline furnace. Wenzelwe ngqo ama-silicon furnace aqinile ensimini ye-semiconductor yezimboni, usebenzisa ugesi we-DC chopper. Usebenzisa ugesi we-rectifier bridge rectifier wezigaba ezintathu, amadivayisi okukhipha i-IGBT chopper, futhi usebenzisa imodi yokulawula ye-PWM ukuze kufezwe i-voltage ye-DC eguquguqukayo eqhubekayo.
Ugesi wokushisa wesithando se-silicon esi-monocrystalline uyi-converter enamandla aphezulu ye-AC/DC esetshenziselwa ukunikeza amandla esifudumezi se-graphite ngaphakathi kwesithando se-silicon esi-monocrystalline
Ukunikezwa kwamandla e-silicon e-monocrystalline kuwukunikezwa kwamandla okushintsha amaza aphezulu okuthuthukisiwe ngokusekelwe ku-inverter yamaza aphezulu, i-phase-shifting full bridge, kanye nobuchwepheshe bokulawula be-PWM kusetshenziswa amadivayisi amaza aphezulu.
Xhumana nathi
(Ungangena futhi bese ugcwalisa ngokuzenzakalelayo.)
